DESCRIPTION
TheISSI IS41C16256 and IS41LV16256 are 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41C16256 and IS41LV16256 ideal for use in 16 and 32-bit wide data bus systems.

FEATURES
• TTL compatible inputs and outputs
• Refresh Interval: 512 cycles/8 ms
• Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden
• JEDEC standard pinout
• Single power supply
    5V ± 10% (IS41C16256)
    3.3V ± 10% (IS41LV16256)
• Byte Write and Byte Read operation via two CAS
• Extended Temperature Range -30oC to 85oC
• Industrail Temperature Range -40oC to 85oC