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IS41C44002 数据手册 ( 数据表 ) - Integrated Silicon Solution

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零件编号
IS41C44002

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19 Pages

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132.6 kB

生产厂家
ISSI
Integrated Silicon Solution ISSI

DESCRIPTION
The ISSI 4400 Series is a 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 or 4096 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.


FEATURES
• Extended Data-Out (EDO) Page Mode access cycle
• TTL compatible inputs and outputs
• Refresh Interval:
    – 2,048 cycles/32 ms
    – 4,096 cycles/64 ms
• Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden
• Single power supply:
    – 5V±10% or 3.3V ± 10%
• Byte Write and Byte Read operation via two CAS
• Industrial temperature range -40°C to 85°C

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零件编号
产品描述 (功能)
PDF
生产厂家
4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
Integrated Silicon Solution
4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
Integrated Circuit Solution Inc
4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
Integrated Circuit Solution Inc
4M x 16 (64-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
Integrated Silicon Solution
4M x 4 DYNAMIC RAM EDO PAGE MODE
Taiwan Memory Technology
4M x 4 DYNAMIC RAM EDO PAGE MODE
Taiwan Memory Technology
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
Integrated Circuit Solution Inc
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
Integrated Silicon Solution
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
Integrated Silicon Solution
4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE ( Rev : 2002 )
AMIC Technology

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