Overview
The LE28C1001M, T series ICs are 1 MEG flash memory products that feature a 131072-word ×8-bit organization and 5 V single-voltage power supply operation. CMOS peripheral circuits are adopted for high speed, low power dissipation, and ease of use. A 128-byte page rewrite function provides rapid data rewriting.

FEATUREs
• Highly reliable 2-layer polysilicon CMOS flash EEPROM process
• Read and write operations using a 5 V single-voltage power supply
• Fast access time: 90, 120, and 150 ns
• Low power dissipation
— Operating current (read): 30 mA (maximum)
— Standby current: 20 µA (maximum)
• Highly reliable read/write
— Erase/write cycles: 10⁴/10³ cycles
— Data retention: 10 years
• Address and data latches
• Fast page rewrite operation
— 128 bytes per page
— Byte/page rewrite time: 5 ms (typical)
— Chip rewrite time: 5 s (typical)
• Automatic rewriting using internally generated Vpp
• Rewrite complete detection function
— Toggle bit
— Data polling
• Hardware and software data protection functions
• All inputs and outputs are TTL compatible.
• Pin assignment conforms to the JEDEC byte-wide EEPROM standard.
• Package
  SOP 32-pin (525 mil) plastic package : LE28C1001M
  TSOP 32-pin (8 ×20 mm)plastic package : LE28C1001T