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MMG3009NT1 数据手册 ( 数据表 ) - Freescale Semiconductor

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零件编号
MMG3009NT1

Other PDF
  2006  

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15 Pages

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293.5 kB

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Freescale
Freescale Semiconductor Freescale

Heterojunction Bipolar Transistor (InGaP HBT)
Broadband High Linearity Amplifier

The MMG3009NT1 is a General Purpose Amplifier that is internally input and output matched. It is designed for a broad range of Class A, small-signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 0 to 6000 MHz such as Cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small-signal RF.

Features
• Frequency: 0 to 6000 MHz
• P1dB: 18 dBm @ 900 MHz
• Small-Signal Gain: 15 dB @ 900 MHz
• Third Order Output Intercept Point: 34 dBm @ 900 MHz
• Single 5 Volt Supply
• Internally Matched to 50 Ohms
• Low Cost SOT-89 Surface Mount Package
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.

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零件编号
产品描述 (功能)
PDF
生产厂家
Heterojunction Bipolar Transistor (InGaP HBT)
Freescale Semiconductor
Heterojunction Bipolar Transistor (InGaP HBT)
Freescale Semiconductor
Heterojunction Bipolar Transistor (InGaP HBT)
NXP Semiconductors.
Heterojunction Bipolar Transistor (InGaP HBT) ( Rev : 2008 )
Freescale Semiconductor
Heterojunction Bipolar Transistor (InGaP HBT) ( Rev : 2005 )
Freescale Semiconductor
Heterojunction Bipolar Transistor (InGaP HBT)
Freescale Semiconductor
Heterojunction Bipolar Transistor (InGaP HBT)
NXP Semiconductors.
Heterojunction Bipolar Transistor (InGaP HBT)
NXP Semiconductors.
Heterojunction Bipolar Transistor (InGaP HBT)
NXP Semiconductors.
Heterojunction Bipolar Transistor (InGaP HBT) ( Rev : 2008 )
Freescale Semiconductor

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