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MMG3009NT1 数据手册 ( 数据表 ) - NXP Semiconductors.

MMG3009NT1 image

零件编号
MMG3009NT1

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14 Pages

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361.5 kB

生产厂家
NXP
NXP Semiconductors. NXP

0--6000 MHz, 15 dB 18 dBm InGaP HBT GPA

The MMG3009NT1 is a general purpose amplifier that is internally input and output matched. It is designed for a broad range of Class A, small--signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 0 to 6000 MHz such as cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small- signal RF.


FEATUREs
● Frequency: 0 to 6000 MHz
● P1dB: 18 dBm @ 900 MHz
● Small--Signal Gain: 15 dB @ 900 MHz
● Third Order Output Intercept Point: 34 dBm @ 900 MHz
● Single 5 V Supply
● Internally Matched to 50 Ohms
● Cost--effective SOT--89 Surface Mount Plastic Package
● In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.


零件编号
产品描述 (功能)
PDF
生产厂家
Heterojunction Bipolar Transistor (InGaP HBT)
Freescale Semiconductor
Heterojunction Bipolar Transistor (InGaP HBT)
Freescale Semiconductor
Heterojunction Bipolar Transistor (InGaP HBT)
NXP Semiconductors.
Heterojunction Bipolar Transistor (InGaP HBT) ( Rev : 2008 )
Freescale Semiconductor
Heterojunction Bipolar Transistor (InGaP HBT) ( Rev : 2005 )
Freescale Semiconductor
Heterojunction Bipolar Transistor (InGaP HBT)
Freescale Semiconductor
Heterojunction Bipolar Transistor (InGaP HBT)
NXP Semiconductors.
Heterojunction Bipolar Transistor (InGaP HBT)
NXP Semiconductors.
Heterojunction Bipolar Transistor (InGaP HBT) ( Rev : 2008 )
Freescale Semiconductor
Heterojunction Bipolar Transistor (InGaP HBT)
Freescale Semiconductor

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