Features
• Tungsten/Platinum schottky barrier for very low VF
• Oxide passivated structure for very low leakage currents
• Guard ring protection for increased reverse energy capability
• Epitaxial structure minimizes forward voltage drop
• Hermetically sealed, low profile ceramic surface mount power package
• Low package inductance
• Very low thermal resistance
• Available as standard polarity (strap is anode: 1N6815) and reverse
   polarity (strap is cathode: 1N6815R)
• TXV-level (MSASC25H45KV) or S-level (MSASC25H45KS) screening
   i.a.w. Microsemi Internal Procedure PS11.50 available