NE4210S01 数据手册 ( 数据表 ) - NEC => Renesas Technology
零件编号
NE4210S01
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16 Pages
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NEC => Renesas Technology
DESCRIPTION
The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems.
FEATURES
• Super Low Noise Figure & High Associated Gain NF = 0.5 dB TYP. Ga = 13.0 dB TYP. @f = 12 GHz
• Gate Length: Lg ≤ 0.20 µm
• Gate Width : Wg = 160 µm
零件编号
产品描述 (功能)
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生产厂家
C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
California Eastern Laboratories.
C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
California Eastern Laboratories.
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
California Eastern Laboratories.
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