NE429M01 数据手册 ( 数据表 ) - NEC => Renesas Technology
零件编号
NE429M01
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12 Pages
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43.2 kB
生产厂家
NEC => Renesas Technology
DESCRIPTION
The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.
FEATURES
• Super low noise figure & High associated gain
NF = 0.9 dB TYP., Ga = 10 dB TYP. @ f = 12 GHz
• 6-pin super minimold package
• Gate width: Wg = 200µm
零件编号
产品描述 (功能)
PDF
生产厂家
C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
California Eastern Laboratories.
C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
California Eastern Laboratories.
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
California Eastern Laboratories.
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