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![NEC](/logo/NEC.png)
NEC => Renesas Technology
![NEC](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
DESCRIPTION
The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power (CW) with high linear gain, high efficiency and excellent distortion. Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
FEATURES
• High Output Power : Po (1dB) = +35 dBm typ.
• High Linear Gain : 10 dB typ.
• High Power Added Efficiency: 50% typ. @VDS = 6 V, IDset = 500 mA, f = 1.9 GHz
NEC'S 3W, L/S-BAND MEDIUM POWER GaAs MESFET
California Eastern Laboratories.
L/S BAND MEDIUM POWER GaAs MESFET
California Eastern Laboratories.
L&S BAND MEDIUM POWER GaAs MESFET
NEC => Renesas Technology
3W X, Ku-BAND POWER GaAs MESFET
NEC => Renesas Technology
GaAs MESFET L TO S BAND LOW NOISE AMPLIFIER
California Eastern Laboratories.
100W L-BAND PUSH-PULL POWER GaAs MESFET
NEC => Renesas Technology
NEC's 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET
California Eastern Laboratories.
L,S BAND POWER GaAs FET ( Rev : 2004 )
MITSUBISHI ELECTRIC
L,S BAND POWER GaAs FET
Mitsumi
L, S BAND POWER GaAs FET
Mitsumi