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NE6500379A 数据手册 ( 数据表 ) - NEC => Renesas Technology

NE6500379A image

零件编号
NE6500379A

产品描述 (功能)

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8 Pages

File Size
65.9 kB

生产厂家
NEC
NEC => Renesas Technology NEC

DESCRIPTION
The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power (CW) with high linear gain, high efficiency and excellent distortion. Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.


FEATURES
• High Output Power : Po (1dB) = +35 dBm typ.
• High Linear Gain : 10 dB typ.
• High Power Added Efficiency: 50% typ. @VDS = 6 V, IDset = 500 mA, f = 1.9 GHz

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零件编号
产品描述 (功能)
PDF
生产厂家
NEC'S 3W, L/S-BAND MEDIUM POWER GaAs MESFET
California Eastern Laboratories.
L/S BAND MEDIUM POWER GaAs MESFET
California Eastern Laboratories.
L&S BAND MEDIUM POWER GaAs MESFET
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GaAs MESFET L TO S BAND LOW NOISE AMPLIFIER
California Eastern Laboratories.
100W L-BAND PUSH-PULL POWER GaAs MESFET
NEC => Renesas Technology
NEC's 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET
California Eastern Laboratories.
L,S BAND POWER GaAs FET ( Rev : 2004 )
MITSUBISHI ELECTRIC
L,S BAND POWER GaAs FET
Mitsumi
L, S BAND POWER GaAs FET
Mitsumi

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