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NE6501077_00 数据手册 ( 数据表 ) - California Eastern Laboratories.

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零件编号
NE6501077_00

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2 Pages

File Size
27.1 kB

生产厂家
CEL
California Eastern Laboratories. CEL

DESCRIPTION
The NE6501077 is a medium power GaAs MESFET designed for up to a 10 W output stage or as a driver for high power devices. The device has no internal matching and can be used from UHF frequencies up to 3.0 GHz. The chips used in this series offer superior reliability and consistent performance for which NEC microwave semiconductors are known.
The NE6501077 transistors are manufactured to NECs stringent quality assurance standards to ensure highest reliability and consistent superior performance.


FEATURES
• HIGH OUTPUT POWER: 10 W
• HIGH LINEAR GAIN: 10.5 dB
• HIGH EFFICIENCY: 40%
• INDUSTRY STANDARD PACKAGING

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零件编号
产品描述 (功能)
PDF
生产厂家
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NEC => Renesas Technology
3W L, S-BAND POWER GaAs MESFET
NEC => Renesas Technology
NEC'S 3W, L/S-BAND MEDIUM POWER GaAs MESFET
California Eastern Laboratories.
C-BAND MEDIUM POWER GaAs MESFET
California Eastern Laboratories.
GaAs MESFET L TO S BAND LOW NOISE AMPLIFIER
California Eastern Laboratories.
100W L-BAND PUSH-PULL POWER GaAs MESFET
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L,S BAND POWER GaAs FET ( Rev : 2004 )
MITSUBISHI ELECTRIC
L,S BAND POWER GaAs FET
Mitsumi
L, S BAND POWER GaAs FET
Mitsumi
L, S BAND POWER GaAs FET
Mitsumi

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