DESCRIPTION
NECs NESG2101M05 is fabricated using NECs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators
NECslow profile, flat lead style M05 Package provides high frequency performance for compact wireless designs.

FEATURES
• HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY
   VCEO = 5 V (Absolute Maximum)
• HIGH OUTPUT POWER:
   P1dB = 21 dBm at 2 GHz
• LOW NOISE FIGURE:
   NF = 0.9 dBm at 2 GHz
• HIGH MAXIMUM STABLE POWER GAIN:
   MSG = 17 dB at 2 GHz
• LOW PROFILE M05 PACKAGE:
   SOT-343 footprint, with a height of only 0.59 mm
   Flat lead style for better RF performance