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NESG3031M05(2004) 数据手册 ( 数据表 ) - California Eastern Laboratories.

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零件编号
NESG3031M05

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3 Pages

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生产厂家
CEL
California Eastern Laboratories. CEL

FEATURES
• LOW NOISE FIGURE AND HIGH-GAIN
    NF= 0.95 dB TYP, Ga= 10 dB TYP @ VCE= 2 V, IC= 6 mA, f = 5.2 GHz
    NF= 1.1 dB TYP, Ga= 9.5 dB TYP @ VCE= 2 V, IC= 6 mA, f = 5.8 GHz
• MAXIMUM STABLE POWER GAIN:
    MSG = 14.0 dB TYP @ VCE = 3 V, IC = 20 mA, f = 5.8 GHz
• SiGe HBT TECHNOLOGY:
    USH3 process, fmax = 110 GHz
• M05 PACKAGE:
    Flat-lead 4 pin thin-type super minimold package

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零件编号
产品描述 (功能)
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生产厂家
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
California Eastern Laboratories.
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
NEC => Renesas Technology
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
California Eastern Laboratories.
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
NEC => Renesas Technology
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
California Micro Devices => Onsemi
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
NEC => Renesas Technology
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
California Eastern Laboratories.
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
California Eastern Laboratories.
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR
California Eastern Laboratories.
NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR
California Eastern Laboratories.

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