DESCRIPTION
The NP82N06MLG and NP82N06NLG are N-channel MOS Field Effect Transistors designed for high current switching applications.

FEATURES
• Logic level
• Built-in gate protection diode
• Super low on-state resistance
   RDS(on)1 = 7.4 mΩ MAX. (VGS = 10 V, ID = 41 A)
   RDS(on)2 = 9.7 mΩ MAX. (VGS = 5 V, ID = 41 A)
• High current rating
   ID(DC) = ±82 A
• Low input capacitance
   Ciss = 5700 pF TYP.
• Designed for automotive application and AEC-Q101 qualified