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NP82N06NLG 数据手册 ( 数据表 ) - Renesas Electronics

NP82N06MLG-S18-AY image

零件编号
NP82N06NLG

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page
10 Pages

File Size
295.9 kB

生产厂家
Renesas
Renesas Electronics Renesas

DESCRIPTION
The NP82N06MLG and NP82N06NLG are N-channel MOS Field Effect Transistors designed for high current switching applications.

FEATURES
• Logic level
• Built-in gate protection diode
• Super low on-state resistance
   RDS(on)1 = 7.4 mΩ MAX. (VGS = 10 V, ID = 41 A)
   RDS(on)2 = 9.7 mΩ MAX. (VGS = 5 V, ID = 41 A)
• High current rating
   ID(DC) = ±82 A
• Low input capacitance
   Ciss = 5700 pF TYP.
• Designed for automotive application and AEC-Q101 qualified

 

零件编号
产品描述 (功能)
PDF
生产厂家
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
NEC => Renesas Technology

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