DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
FEATURES
• Channel temperature 175 degree rated
• Super low on-state resistance
RDS(on) = 7.3 mΩ MAX. (VGS = 10 V, ID = 42 A)
• Low input capacitance
Ciss = 4540 pF TYP.
• Built-in gate protection diode