NEC's ø30 µm InGaAs APD IN DIP PACKAGE FOR OTDR APPLICATION
California Eastern Laboratories.
NEC's φ50µm InGaAs PIN-PD IN COAXIAL PACKAGE FOR 2.5 Gbp/s APPLICATIONS
California Eastern Laboratories.
NEC's φ80µm InGaAs PIN-PD IN COAXIAL PACKAGE FOR 155Mb/s AND 622 Mb/s APPLICATIONS
California Eastern Laboratories.
NEC's 1310 nm InGaAsP MQW-DFB LASER DIODE IN COAXIAL PACKAGE FOR FIBER OPTIC COMMUNICATIONS
California Eastern Laboratories.
NEC's 1310 nm InGaAsP MQW FP LASER DIODE IN COAXIAL PACKAGE FOR FIBER OPTIC COMMUNICATIONS
California Eastern Laboratories.
NEC's 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FIBER OPTIC COMMUNICATIONS
California Eastern Laboratories.
NEC's 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FIBER OPTIC COMMUNICATIONS
California Eastern Laboratories.
NEC's 1310 nm InGaAsP MQW FP LASER DIODE IN COAXIAL PACKAGE FOR 622 Mb/s APPLICATIONS
California Eastern Laboratories.
NEC's 1310 nm InGaAsP MQW FP LASER DIODE IN COAXIAL PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
California Eastern Laboratories.
NEC's 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN COAXIAL PACKAGE FOR OTDR APPLICATION (95 mW MIN)
California Eastern Laboratories.