Description:
The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126 type case designed for general–purpose amplifier and low–speed switching applications.

FEATUREs:
• High DC Current Gain: hFE = 2000 (Typ) @ IC = 2A
• Monolithic Construction with Built–In Base–Emitter Resistors to Limit Leakage Multiplication