RD100HHF1(2010) 数据手册 ( 数据表 ) - MITSUBISHI ELECTRIC
零件编号
RD100HHF1
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MITSUBISHI ELECTRIC
DESCRIPTION
RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.
FEATURES
High power and High Gain:
Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz
High Efficiency: 60%typ.on HF Band
APPLICATION
For output stage of high power amplifiers in HF Band mobile radio sets.
零件编号
产品描述 (功能)
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生产厂家
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