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RD16HHF1 数据手册 ( 数据表 ) - Quanzhou Jinmei Electronic

RD16HHF1 image

零件编号
RD16HHF1

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page
8 Pages

File Size
267.8 kB

生产厂家
JMNIC
Quanzhou Jinmei Electronic JMNIC

DESCRIPTION
RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.


FEATURES
   High power gain:
      Pout>16W, Gp>16dB @Vdd=12.5V,f=30MHz


APPLICATION
   For output stage of high power amplifiers in HF band mobile radio sets.


零件编号
产品描述 (功能)
PDF
生产厂家
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W ( Rev : 2010 )
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W ( Rev : 2008 )
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W ( Rev : 2006 )
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W ( Rev : 2010 )
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W ( Rev : 2008 )
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W ( Rev : 2010 )
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W
MITSUBISHI ELECTRIC
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W
Quanzhou Jinmei Electronic
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W ( Rev : 2010 )
MITSUBISHI ELECTRIC

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