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Nexperia B.V. All rights reserved
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General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS5240Z
FEATUREs and benefits
• Low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High energy efficiency due to less heat generation
• AEC-Q101 qualified
APPLICATIONs
• DC-to-DC conversion
• Supply line switching
• Battery charger
• LCD backlighting
• Driver in low supply voltage applications (e.g. lamps and LEDs)
• Inductive load driver (e.g. relays, buzzers and motors)
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Nexperia B.V. All rights reserved
40 V, 2 A PNP low VCEsat (BISS) transistor
NXP Semiconductors.
40 V, 2 A PNP low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
40 V, 2 A PNP low VCEsat (BISS) transistor
NXP Semiconductors.