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SGA-8343X 数据手册 ( 数据表 ) - Stanford Microdevices

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零件编号
SGA-8343X

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Stanford Microdevices STANFORD

Qualification Overview
The SGA-8343X family of products has demonstrated reliable operation by passing all qualification testing in our product qualification test plan. The “X’ designates a lead-free lead frame using Tin plated leads. The SGA-8343X has been subject to stresses such as humidity (autoclave), extreme hot and cold environments (temperature cycling), moisture sensitivity (MSL-1 and solder reflow testing), and has demonstrated reliable performance.

Introduction
Sirenza Microdevices’ SGA-8343X is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from DC to 6 GHz. The SGA-8343X is optimized for 3V operation but can be biased at 2V for low voltage battery operated systems. The device provides high gain, low NF, and excellent linearity at a low cost. It can be operated at very low bias currents in applications where high linearity is not required.

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