DESCRIPTION
The ST2306 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application suchas cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outline surface mount package.

FEATURE
30V/3.5A, RDS(ON) = 70m-ohm @VGS = 10V
30V/2.8A, RDS(ON)= 95m-ohm @VGS = 5V
Super high density cell design for extremely low RDS(ON) 
Exceptional on-resistance and maximum DC current capability
SOT-23-3L /SOT-23 package design