生产厂家
STMicroelectronics
Description
This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched among silicon based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
FEATUREs
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
APPLICATIONs
■ Switching applications
N-channel 650 V, 0.180 Ω typ., 15 A MDmesh™ V Power MOSFET in a PowerFLAT™ 8x8 HV package ( Rev : 2013 )
STMicroelectronics
N-channel 650 V, 180 mΩ typ., 15 A, MDmesh M5 Power MOSFET in a PowerFLAT 8x8 HV package
STMicroelectronics
N-channel 650 V, 0.135 Ω typ., 15 A MDmesh™ V Power MOSFET in a PowerFLAT™ 8x8 HV package
STMicroelectronics
N-channel 600 V, 0.280 Ω typ., 11 A, MDmesh DM2 Power MOSFET in a PowerFLAT 8x8 HV package
STMicroelectronics
N-channel 650 V, 0.475 Ω typ., 8.5 A MDmesh™ V Power MOSFET in a PowerFLAT™ 5x6 HV package
STMicroelectronics
N-channel 600 V, 0.320 Ω typ., 10 A MDmesh™ II Power MOSFET in a PowerFLAT™ 8x8 HV package
STMicroelectronics
N-channel 600 V, 0.186 Ω typ., 18 A MDmesh™ M2 Power MOSFET in a PowerFLAT™ 8x8 HV package
STMicroelectronics
N-channel 650 V, 0.037 Ω typ., 58 A, MDmesh™ V Power MOSFET in a TO247-4 package
STMicroelectronics
N-channel 650 V, 0.056 Ω typ., 42 A, MDmesh™ V Power MOSFET in a TO247-4 package
STMicroelectronics
N-channel 600 V, 0.280 Ω typ., 11 A MDmesh™ DM2 with fast diode Power MOSFET in a PowerFLAT™ 8x8 HV package ( Rev : 2014 )
STMicroelectronics