Description
The V55C2128164V(T/B) is a four bank Synchronous DRAM organized as 4 banks x 2Mbit x 16. The V55C2128164V(T/B) achieves high speed data transfer rates up to 166 MHz by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock.

FEATUREs
■ 4 banks x 2Mbit x 16 organization
■ High speed data transfer rates up to 166 MHz
■ Full Synchronous Dynamic RAM, with all signals referenced to clock rising edge
■ Single Pulsed RAS Interface
■ Data Mask for Read/Write Control
■ Four Banks controlled by BA0 & BA1
■ Programmable CAS Latency:1, 2, 3
■ Programmable Wrap Sequence: Sequential or Interleave
■ Programmable Burst Length:
    1, 2, 4, 8, Full page for Sequential Type
    1, 2, 4, 8 for Interleave Type
■ Multiple Burst Read with Single Write Operation
■ Automatic and Controlled Precharge Command
■ Random Column Address every CLK (1-N Rule)
■ Power Down Mode and Clock Suspend Mode
■ Deep Power Mode
■ Auto Refresh and Self Refresh
■ Refresh Interval: 4096 cycles/64 ms
■ Available in 54-ball FBGA, with 9x6 ball array with 3 depupulated rows, 9x8 mm and 54 pin TSOP II
■ VDD=2.5V, VDDQ=1.8V
■ Programmable Power Reduction Feature by partial array activation during Self-Refresh
■ Operating Temperature Range
    Commercial (0°C to 70°C)
    Extended (-25°C to +85°C)