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VNS1NV04TR-E 数据手册 ( 数据表 ) - STMicroelectronics

VNS1NV04TR-E image

零件编号
VNS1NV04TR-E

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33 Pages

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380.7 kB

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ST-Microelectronics
STMicroelectronics ST-Microelectronics

Description
The VND1NV04, VNN1NV04, VNS1NV04 are monolithic devices designed in
STMicroelectronics® VIPower® M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 KHz applications.
Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.
Fault feedback can be detected by monitoring the voltage at the input pin.


FEATUREs
■ Linear current limitation
■ Thermal shutdown
■ Short circuit protection
■ Integrated clamp
■ Low current drawn from input pin
■ Diagnostic feedback through input pin
■ ESD protection
■ Direct access to the gate of the Power MOSFET (analog driving)
■ Compatible with standard Power MOSFET

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零件编号
产品描述 (功能)
PDF
生产厂家
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