datasheetbank_Logo
数据手册搜索引擎和 Datasheet免费下载 PDF
HOME  >>>  Vishay Semiconductors  >>> VSLB3940-QS21 PDF

VSLB3940-QS21 数据手册 ( 数据表 ) - Vishay Semiconductors

VSLB3940 image

零件编号
VSLB3940-QS21

Other PDF
  no available.

PDF
DOWNLOAD     

page
5 Pages

File Size
103.6 kB

生产厂家
Vishay
Vishay Semiconductors Vishay

DESCRIPTION
VSLB3940 is a high speed infrared emitting diode in GaAlAs, MQW technology, molded in a clear plastic package.


FEATURES
• Package type: leaded
• Package form: T-1, clear epoxy
• Dimensions: Ø 3 mm
• Peak wavelength: λp = 940 nm
• High speed
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 22°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching to Si photodetectors
• Material categorization: for definitions of compliance
   please see www.vishay.com/doc?99912


APPLICATIONS
• Infrared remote control units
• Free air transmission systems
• Infrared source for optical counters and card readers


零件编号
产品描述 (功能)
PDF
生产厂家
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW
Vishay Semiconductors
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW
Vishay Semiconductors
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW
Vishay Semiconductors
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW ( Rev : 2014 )
Vishay Semiconductors
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW
Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
Vishay Semiconductors

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Japanese日本語 Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]