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Vishay Semiconductors
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DESCRIPTION
VSLB3940 is a high speed infrared emitting diode in GaAlAs, MQW technology, molded in a clear plastic package.
FEATURES
• Package type: leaded
• Package form: T-1, clear epoxy
• Dimensions: Ø 3 mm
• Peak wavelength: λp = 940 nm
• High speed
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 22°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching to Si photodetectors
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Infrared remote control units
• Free air transmission systems
• Infrared source for optical counters and card readers
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW
Vishay Semiconductors
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW
Vishay Semiconductors
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW
Vishay Semiconductors
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW ( Rev : 2014 )
Vishay Semiconductors
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW
Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
Vishay Semiconductors