PHP14NQ20T 查看數據表（PDF） - Philips Electronics
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PHP14NQ20T Datasheet PDF : 14 Pages
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Philips Semiconductors
PHP/PHB/PHD14NQ20T
TrenchMOS™ standard level FET
3. Limiting values
Table 2: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage
drain current (DC)
IDM
peak drain current
Tj = 25 to 175 oC
Tj = 25 to 175 oC; RGS = 20 kΩ
VGS = 10 V; Figure 2 and 3
Tmb = 25 °C
Tmb = 100 °C
Tmb = 25 °C; pulsed; tp ≤ 10 µs;
Figure 3
Ptot
total power dissipation
Tstg
storage temperature
Tj
operating junction temperature
Source-drain diode
Tmb = 25 °C; Figure 1
IS
source (diode forward) current (DC)
ISM
peak source (diode forward) current
Avalanche ruggedness
Tmb = 25 °C
Tmb = 25 °C; pulsed; tp ≤ 10 µs
EDS(ALS)
IDS(ALM)
non-repetitive avalanche energy
peak non-repetitive avalanche current
unclamped inductive load; ID = 14 A;
tp = 20 µs; VDD ≤ 25 V; RGS = 50 Ω;
VGS = 10 V; starting Tj = 25 °C;
Figure 15
Min
Max
Unit
-
200
V
-
200
V
-
±20
V
-
14
A
-
10
A
-
56
A
-
125
W
−55
+175
°C
−55
+175
°C
-
14
A
-
56
A
-
70
mJ
-
14
A
9397 750 09535
Product data
Rev. 03 — 11 March 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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