PHP14NQ20T 查看數據表（PDF） - Philips Electronics
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PHP14NQ20T Datasheet PDF : 14 Pages
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Philips Semiconductors
PHP/PHB/PHD14NQ20T
TrenchMOS™ standard level FET
5. Characteristics
Table 4: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Static characteristics
V(BR)DSS drain-source breakdown voltage
VGS(th)
gate-source threshold voltage
IDSS
drain-source leakage current
IGSS
RDSon
gate-source leakage current
drain-source on-state resistance
Dynamic characteristics
gfs
forward transconductance
Qg(tot)
total gate charge
Qgs
gate-source charge
Qgd
gate-drain (Miller) charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain (diode forward)
voltage
trr
reverse recovery time
Qr
recovered charge
Conditions
ID = 250 µA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
ID = 1 mA; VDS = VGS;
Figure 9
Tj = 25 °C
Tj = 175 °C
Tj = −55 °C
VDS = 200 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = ±10 V; VDS = 0 V
VGS = 10 V; ID = 7 A;
Figure 7 and 8
Tj = 25 °C
Tj = 175 °C
VDS = 25 V; ID = 7 A;
Figure 14
ID = 14 A; VDD = 160 V;
VGS = 10 V; Figure 13
VGS = 0 V; VDS = 25 V;
f = 1 MHz; Figure 11
VDD = 30 V; RD = 10 Ω;
VGS = 10 V; RGS = 50 Ω;
Rgen = 50 Ω
IS = 14 A; VGS = 0 V;
Figure 12
IS = 14 A;
dIS/dt = −100 A/µs;
VGS = 0 V; VR = 30 V
Min
Typ
Max
Unit
200
-
-
V
178
-
-
V
2
3
4
V
1
-
-
V
-
-
6
V
-
0.05
10
µA
-
-
500
µA
-
10
100
nA
-
150
230
mΩ
-
-
633
mΩ
6
12.1
-
S
-
38
-
nC
-
4
-
nC
-
13.3
-
nC
-
1500
-
pF
-
128
-
pF
-
60
-
pF
-
25
-
ns
-
40
-
ns
-
83
-
ns
-
31
-
ns
-
1.0
1.5
V
-
135
-
ns
-
690
-
nC
9397 750 09535
Product data
Rev. 03 — 11 March 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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