PHP14NQ20T 查看數據表（PDF） - Philips Electronics
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PHP14NQ20T Datasheet PDF : 14 Pages
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Philips Semiconductors
PHP/PHB/PHD14NQ20T
TrenchMOS™ standard level FET
5
VGS(th)
(V)
4
3
2
1
003aaa226
max
typ
min
10-1
ID
(A)
10-2
10-3
10-4
10-5
03aa35
min typ
max
0
-100
0
100 Tj (οC) 200
10-6
0
2
4
6
VGS (V)
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
Tj = 25 °C; VDS = 5 V
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
104
C
(pF)
103
102
003aaa227
Ciss
Coss
Crss
30
IS
(A)
20
10
003aaa229
Tj = 175 οC
Tj = 25 οC
10
0
10
20
30
40
VDS (V)
0
0
0.4
0.8
1.2
VSD (V)
VGS = 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
Tj = 25 °C and 175 °C; VGS = 0 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
9397 750 09535
Product data
Rev. 03 — 11 March 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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