PHP14NQ20T 查看數據表（PDF） - Philips Electronics
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PHP14NQ20T Datasheet PDF : 14 Pages
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Philips Semiconductors
PHP/PHB/PHD14NQ20T
TrenchMOS™ standard level FET
12
VGS
(V)
8
4
003aaa228
VDD = 40 V
VDD = 160 V
0
0
10
20
30
40
QG (nC)
ID = 15 A; VDD = 40 V and 160 V
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
20
gfs
(S)
16
003aaa224
12
8
4
0
0
10
20
30
ID (A)
VDS = 25 V
Fig 14. Forward transconductance as a function of
drain current; typical values.
102
IAS
(A)
10
003aaa230
25 οC
1
Tj prior to avalanche = 150 οC
10-1
10-3
10-2
10-1
1
10
tp (ms)
Unclamped inductive load; VDD ≤ 25 V; RGS = 50 Ω; VGS = 10 V; starting Tj = 25 °C and 150 °C
Fig 15. Non-repetitive avalanche ruggedness current as a function of pulse duration; typical values.
9397 750 09535
Product data
Rev. 03 — 11 March 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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