74LVC3G34DC 查看數據表（PDF） - Philips Electronics

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74LVC3G34DC

Triple buffer gate

Philips Electronics 

Philips Semiconductors

74LVC3G34

Triple buffer gate

8. Functional description

Table 5: Function table [1]

Input nA

L

H

[1] H = HIGH voltage level;

L = LOW voltage level.

9. Limiting values

Output nY

L

H

Table 6: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to

GND (ground = 0 V).

Symbol Parameter

Conditions

Min

Max

Unit

VCC

supply voltage

VI

input voltage

VO

output voltage

active mode

Power-down mode

−0.5

[1] −0.5

[1] [2] −0.5

[1] [2] −0.5

+6.5

V

+6.5

V

VCC + 0.5 V

+6.5

V

IIK

input diode current

VI < 0 V

IOK

output diode current VO > VCC or VO < 0 V

IO

output source or sink VO = 0 V to VCC

current

-

−50

mA

-

±50

mA

-

±50

mA

ICC, IGND

Tstg

Ptot

VCC or GND current

storage temperature

power dissipation

Tamb = −40 °C to +125 °C

-

±100

mA

−65

+150

°C

-

300

mW

[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

[2] When VCC = 0 V (Power-down mode), the output voltage can be 5.5 V in normal operation.

10. Recommended operating conditions

Table 7: Recommended operating conditions

Symbol Parameter

Conditions

VCC

VI

VO

Tamb

tr, tf

supply voltage

input voltage

output voltage

ambient temperature

input rise and fall

times

active mode

Power-down mode; VCC = 0 V

VCC = 1.65 V to 2.7 V

VCC = 2.7 V to 5.5 V

Min Typ

1.65 -

0

-

0

-

0

-

−40 -

0

-

0

-

Max Unit

5.5 V

5.5 V

VCC V

5.5 V

+125 °C

20 ns/V

10 ns/V

9397 750 14545

Product data sheet

Rev. 03 — 31 January 2005

© Koninklijke Philips Electronics N.V. 2005. All rights reserved.

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