74LVC3G34DC 查看數據表（PDF） - Philips Electronics
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74LVC3G34DC Datasheet PDF : 14 Pages
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Philips Semiconductors
Table 9: Dynamic characteristics …continued
GND = 0 V; test circuit see Figure 6.
Symbol Parameter
Conditions
Tamb = −40 °C to +125 °C
tPHL, tPLH
propagation delay
input nA to output nY
see Figure 5
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 2.7 V
VCC = 3.0 V to 3.6 V
VCC = 4.5 V to 5.5 V
[1] All typical values are measured at nominal VCC and Tamb = 25 °C.
[2] CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + ∑(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
∑(CL × VCC2 × fo) = sum of outputs.
[3] The condition is VI = GND to VCC.
13. AC waveforms
74LVC3G34
Triple buffer gate
Min
Typ
Max
Unit
1.0
-
0.5
-
0.5
-
0.5
-
0.5
-
10.8
ns
5.5
ns
6.3
ns
5.1
ns
4.0
ns
VI
nA input
GND
VOH
tPLH
nY output
VOL
VM
VM
VM
tPHL
VM
001aaa725
Fig 5.
Measurement points are given in Table 10.
Logic levels: VOL and VOH are typical output voltage drop that occur with the output load.
Input nA to output nY propagation delay times
Table 10: Measurement points
Supply voltage
Input
VCC
1.65 V to 1.95 V
2.3 V to 2.7 V
VM
0.5 × VCC
0.5 × VCC
2.7 V
1.5 V
3.0 V to 3.6 V
1.5 V
4.5 V to 5.5 V
0.5 × VCC
Output
VM
0.5 × VCC
0.5 × VCC
1.5 V
1.5 V
0.5 × VCC
9397 750 14545
Product data sheet
Rev. 03 — 31 January 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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