74LVC3G34DC 查看數據表（PDF） - Philips Electronics
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74LVC3G34DC Datasheet PDF : 14 Pages
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Philips Semiconductors
74LVC3G34
Triple buffer gate
Table 8: Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min
Typ
VOH
VOL
ILI
Ioff
ICC
∆ICC
HIGH-level output voltage VI = VIH or VIL
IO = −100 µA; VCC = 1.65 V to 5.5 V
IO = −4 mA; VCC = 1.65 V
IO = −8 mA; VCC = 2.3 V
IO = −12 mA; VCC = 2.7 V
IO = −24 mA; VCC = 3.0 V
IO = −32 mA; VCC = 4.5 V
LOW-level output voltage VI = VIH or VIL
IO = 100 µA; VCC = 1.65 V to 5.5 V
IO = 4 mA; VCC = 1.65 V
IO = 8 mA; VCC = 2.3 V
IO = 12 mA; VCC = 2.7 V
IO = 24 mA; VCC = 3.0 V
IO = 32 mA; VCC = 4.5 V
input leakage current
VCC = 5.5 V; VI = 5.5 V or GND
power-off leakage current VCC = 0 V; VI or VO = 5.5 V
quiescent supply current VCC = 5.5 V; VI = VCC or GND; IO = 0 A
additional quiescent
supply current per pin
VCC = 2.3 V to 5.5 V; VI = VCC − 0.6 V;
IO = 0 A
VCC − 0.1 -
0.95
-
1.7
-
1.9
-
2.0
-
3.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
[1] All typical values are measured at Tamb = 25 °C.
12. Dynamic characteristics
Table 9: Dynamic characteristics
GND = 0 V; test circuit see Figure 6.
Symbol Parameter
Tamb = −40 °C to +85 °C [1]
tPHL, tPLH
propagation delay
input nA to output nY
CPD
power dissipation
capacitance per gate
Conditions
see Figure 5
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 2.7 V
VCC = 3.0 V to 3.6 V
VCC = 4.5 V to 5.5 V
VCC = 3.3 V
Min
Typ
1.0
3.8
0.5
2.4
0.5
2.5
0.5
2.2
0.5
1.9
[2] [3] -
14
Max
-
-
-
-
-
-
0.1
0.70
0.45
0.60
0.80
0.80
±20
±20
40
5 000
Max
8.6
4.4
5.0
4.1
3.2
-
Unit
V
V
V
V
V
V
V
V
V
V
V
V
µA
µA
µA
µA
Unit
ns
ns
ns
ns
ns
pF
9397 750 14545
Product data sheet
Rev. 03 — 31 January 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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