NDS9958 查看數據表（PDF） - Fairchild Semiconductor

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NDS9958

Dual N & P-Channel Enhancement Mode Field Effect Transistor

Fairchild Semiconductor 

Electrical Characteristics (TA= 25°C unless otherwise noted)

Symbol Parameter

Conditions

OFF CHARACTERISTICS

BVDSS

IDSS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

VGS = 0 V, ID = 250 µA

VGS = 0 V, ID = -250 µA

VDS = 16 V, VGS = 0 V

VDS = -16 V, VGS = 0 V

IGSSF

Gate - Body Leakage, Forward

IGSSR

Gate - Body Leakage, Reverse

ON CHARACTERISTICS (Note 2)

VGS(th)

Gate Threshold Voltage

VGS = 20 V, VDS = 0 V

VGS = -20 V, VDS= 0 V

VDS = VGS, ID = 250 µA

VDS = VGS, ID = -250 µA

RDS(ON)

Static Drain-Source On-Resistance VGS = 10 V, ID = 3.5 A

VGS = -10 V, ID = -3.5 A

ID(on)

On-State Drain Current

gFS

Forward Transconductance

DYNAMIC CHARACTERISTICS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

VGS = 6V, ID = 3.0 A

VGS = -6 V, ID = -3.0 A

VGS = 4.5 V, ID = 1.0 A

VGS = -4.5 V, ID = -1.0 A

VGS = 10 V, VDS = 5 V

VGS = -10 V, VDS = -5 V

VGS = 4.5 V, VDS = 5 V

VGS = -4.5 V, VDS = -5 V

VDS = 15 V, ID = 3.5 A

VDS = -15 V, ID = -3.5 A

N-Channel

VDS = 10V, VGS = 0 V,

f = 1.0 MHz

P-Channel

VDS = -10 V, VGS = 0 V,

f = 1.0 MHz

Type Min Typ Max Units

TJ = 70°C

TJ = 70°C

N-Ch 20

P-Ch -20

N-Ch

P-Ch

All

All

V

1

µA

5

µA

-1

µA

-5

µA

100 nA

-100 nA

N-Ch 1 1.5

3

V

TJ = 125°C

0.7 1.1

2.2

P-Ch -1 -2.2

-3

TJ = 125°C

-0.8 -1.9 -2.5

N-Ch

0.062 0.1

Ω

TJ = 125°C

0.085 0.14

P-Ch

0.08 0.1

TJ = 125°C

N-Ch

0.11 0.16

0.073 0.12

P-Ch

0.112 0.12

N-Ch

0.08 0.15

P-Ch

0.165 0.19

N-Ch 14

A

P-Ch -14

N-Ch 3.5

P-Ch -2.5

N-Ch

7

S

P-Ch

5

N-Ch

525

pF

P-Ch

785

N-Ch

315

pF

P-Ch

500

N-Ch

185

pF

P-Ch

245

NDS9958.SAM

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