NDS9958 查看數據表（PDF） - Fairchild Semiconductor
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NDS9958 Datasheet PDF : 12 Pages
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Typical Electrical Characteristics: N-Channel (continued)
1.15
I D = 250µA
1.1
1.05
1
0.95
0.9
-50 -25
0
25
50
75 100 125 150
TJ , JUNCTION TEMPERATURE (°C)
Figure 7. Breakdown Voltage Variation with
Temperature.
10
5 V GS = 0V
2
1
0.5
0.2
0.1
0.05
TJ = 125°C
25°C
-55°C
0.02
0.01
0.2
0.4
0.6
0.8
1
1.2
VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature
2000
1000
10
I D = 3.5A
VDS = 10V
8
C iss
6
500
4
300
200
f = 1 MHz
C oss
2
V GS = 0V
C rss
100
0
0.1
0.2
0.5
1
2
5
10
20 30
0
4
8
12
16
VDS , DRAIN TO SOURCE VOLTAGE (V)
Q g , GATE CHARGE (nC)
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
12
VDS = 1 0 V
10
8
TJ = -55°C
25°C
6
125°C
4
2
0
0
2
4
6
8
10
ID , DRAIN CURRENT (A)
Figure 11. Transconductance Variation with Drain
Current and Temperature.
NDS9958.SAM
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