NDS9958 查看數據表（PDF） - Fairchild Semiconductor

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NDS9958

Dual N & P-Channel Enhancement Mode Field Effect Transistor

Fairchild Semiconductor 

Typical Electrical Characteristics: P-Channel

-20

V = -10V

GS

-8.0 -7.0

-15

-6.0

-5.5

-10

-5.0

-4.5

-5

-4.0

0

0

-1

-2

-3

-4

-5

VDS , DRAIN-SOURCE VOLTAGE (V)

Figure 12. On-Region Characteristics.

3.5

VGS = -4.0V -4.5

3

2.5

2

1.5

1

-5.0

-5.5

-6.0

-7.0

-8.0

-10

0.5

0

-4

-8

-12

-16

-20

ID , DRAIN CURRENT (A)

Figure 13. On-Resistance Variation with Gate

Voltage and Drain Current.

1.5

1.4 ID = -3.5A

V GS = -10V

1.3

1.2

1.1

1

0.9

0.8

0.7

-50 -25

0

25

50

75 100 125 150

T J, JUNCTION TEMPERATURE (°C)

Figure 14. On-Resistance Variation

with Temperature.

2

V = -10V

GS

1.5

TJ= 125°C

25°C

1

-55°C

0.5

0

-5

-10

-15

-20

I D , DRAIN CURRENT (A)

Figure 15. On-Resistance Variation with Drain

Current and Temperature.

-10

V DS = -10V

-8

TJ = -55°C

25°C

125°C

-6

-4

-2

0

-1

-2

-3

-4

-5

-6

V , GATE TO SOURCE VOLTAGE (V)

GS

Figure 16. Drain Current Variation with

Gate Voltage and Temperature.

1.1

1.05

1

VDS = VGS

I D = -250µA

0.95

0.9

0.85

0.8

-50

-25

0

25

50

75

100 125 150

TJ , JUNCTION TEMPERATURE (°C)

Figure 17. Gate Threshold Variation with

Temperature.

NDS9958.SAM

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