NDS9958 查看數據表（PDF） - Fairchild Semiconductor

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NDS9958

Dual N & P-Channel Enhancement Mode Field Effect Transistor

Fairchild Semiconductor 

Typical Electrical Characteristics: P-Channel (continued)

1.1

I D = -250µA

1.05

1

0.95

-50

-25

0

25

50

75

100 125 150

T J , JUNCTION TEMPERATURE (°C)

Figure 18. Breakdown Voltage Variation with

Temperature.

10

5 V GS = 0V

TJ = 125°C

1

0.5

25°C

0.1

-55°C

0.01

0.001

0.3

0.6

0.9

1.2

1.5

1.8

-VSD , BODY DIODE FORWARD VOLTAGE (V)

Figure 19. Body Diode Forward Voltage

Variation with Current and Temperature

1500

1000

500

C iss

C oss

300

200

100

0.1

f = 1 MHz

VGS = 0V

C rss

0.2

0.5

1

2

5

10

20

-V , DRAIN TO SOURCE VOLTAGE (V)

DS

Figure 20. Capacitance Characteristics.

-10

IDS = -3.5A

-8

VDS = -5V

-10V

-15V

-6

-4

-2

0

0

5

10

15

20

Q g , GATE CHARGE (nC)

Figure 21. Gate Charge Characteristics

8

V DS = -15V

6

4

TJ = -55°C

25°C

125°C

2

0

0

-3

-6

-9

-12

-15

I D , DRAIN CURRENT (A)

Figure 22. Transconductance Variation with Drain

Current and Temperature.

NDS9958.SAM

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