PML260SN 查看數據表（PDF） - Philips Electronics

零件编号

产品描述 (功能)

比赛名单

PML260SN

N-channel TrenchMOS standard level FET

Philips Electronics 

Philips Semiconductors

PML260SN

N-channel TrenchMOS standard level FET

3. Ordering information

Table 2. Ordering information

Type number

Package

Name

PML260SN

HVSON8

4. Limiting values

Description

Version

plastic thermal enhanced very thin small outline package; no leads; SOT873-1

8 terminals; body 3.3 × 3.3 × 0.85 mm

Table 3. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

VDS

drain-source voltage

VGS

gate-source voltage

ID

drain current

IDM

peak drain current

Ptot

total power dissipation

Tstg

storage temperature

Tj

junction temperature

Source-drain diode

25 °C ≤ Tj ≤ 150 °C

Tmb = 25 °C; VGS = 10 V; see Figure 2 and 3

Tmb = 100 °C; VGS = 10 V; see Figure 2

Tmb = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3

Tmb = 25 °C; see Figure 1

IS

source current

ISM

peak source current

Avalanche ruggedness

Tmb = 25 °C

Tmb = 25 °C; pulsed; tp ≤ 10 µs

EDS(AL)S non-repetitive drain-source

avalanche energy

unclamped inductive load; ID = 3.5 A;

tp = 0.05 ms; VDS ≤ 200 V; RGS = 50 Ω;

VGS = 10 V; starting at Tj = 25 °C

Min

Max Unit

-

200

V

-

±20

V

-

8.8

A

-

5.5

A

-

15

A

-

50

W

−55

+150 °C

−55

+150 °C

-

8.8

A

-

15

A

-

22

mJ

PML260SN_2

Product data sheet

Rev. 02 — 29 May 2006

© Koninklijke Philips Electronics N.V. 2006. All rights reserved.

2 of 12

Share Link: