PML260SN 查看數據表（PDF） - Philips Electronics
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PML260SN Datasheet PDF : 12 Pages
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Philips Semiconductors
PML260SN
N-channel TrenchMOS standard level FET
6. Characteristics
Table 5. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown
voltage
VGS(th) gate-source threshold voltage
IDSS
drain leakage current
IGSS
RG
RDSon
gate leakage current
gate resistance
drain-source on-state
resistance
Dynamic characteristics
ID = 250 µA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
ID = 1 mA; VDS = VGS; see Figure 9 and 10
Tj = 25 °C
Tj = 150 °C
Tj = −55 °C
VDS = 160 V; VGS = 0 V
Tj = 25 °C
Tj = 150 °C
VGS = ±20 V; VDS = 0 V
f = 1 MHz
VGS = 10 V; ID = 2.6 A; see Figure 6 and 8
Tj = 25 °C
Tj = 150 °C
VGS = 6 V; ID = 2.5 A
QG(tot)
QGS
total gate charge
gate-source charge
ID = 2.6 A; VDS = 100 V; VGS = 10 V;
see Figure 11 and 12
QGS1 pre-VGS(th) gate-source charge
QGS2 post-VGS(th) gate-source charge
QGD
gate-drain charge
VGS(pl) gate-source plateau voltage
Ciss
input capacitance
Coss
output capacitance
VGS = 0 V; VDS = 30 V; f = 1 MHz;
see Figure 14
Crss
reverse transfer capacitance
td(on)
tr
turn-on delay time
rise time
VDS = 100 V; RL = 100 Ω; VGS = 10 V;
RG = 5.6 Ω
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain voltage
trr
reverse recovery time
Qr
recovered charge
IS = 3.2 A; VGS = 0 V; see Figure 13
IS = 3.2 A; dIS/dt = −100 A/µs; VGS = 0 V;
VR = 120 V
Min Typ Max Unit
200 -
-
V
178 -
-
V
2
3
1.2 -
-
-
4
V
-
V
4.4 V
-
-
1
µA
-
-
100 µA
-
10 100 nA
-
0.6 -
Ω
-
250 294 mΩ
-
550 647 mΩ
-
263 309 mΩ
-
13.3 -
nC
-
2.4 -
nC
-
1.15 -
nC
-
1.25 -
nC
-
4.2 -
nC
-
4.2 -
V
-
657 -
pF
-
74 -
pF
-
25 -
pF
-
7
-
ns
-
11 -
ns
-
19 -
ns
-
7
-
ns
-
0.8 1.2 V
-
101 -
ns
-
267 -
nC
PML260SN_2
Product data sheet
Rev. 02 — 29 May 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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