PML260SN 查看數據表（PDF） - Philips Electronics
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PML260SN Datasheet PDF : 12 Pages
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Philips Semiconductors
PML260SN
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 4. Thermal characteristics
Symbol Parameter
Conditions
Rth(j-mb) thermal resistance from junction to mounting base see Figure 4
Rth(j-a) thermal resistance from junction to ambient
minimum footprint
[1] Mounted on a printed-circuit board; vertical in still air.
Min Typ Max Unit
-
-
2.5 K/W
[1] -
60 -
K/W
10
Zth(j-mb)
(K/W)
003aab280
δ =0.5
1
0.2
P
δ = tp
T
0.1
0.05
10-1
0.02
single pulse
10-5
10-4
10-3
10-2
10-1
tp
T
1
tp (s)
t
10
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
PML260SN_2
Product data sheet
Rev. 02 — 29 May 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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