PML260SN 查看數據表（PDF） - Philips Electronics
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PML260SN Datasheet PDF : 12 Pages
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Philips Semiconductors
PML260SN
N-channel TrenchMOS standard level FET
12
ID
(A)
8
VGS (V) = 10
003aab063
5
4
3.8
4
3.6
3.4
3.2
0
0
1
2
3
4
5
VDS (V)
800
RDSon
(mΩ)
600
400
200
0
0
3.6 3.8
4
003aab064
VGS (V) = 5
10
4
8
12
ID (A)
Tj = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Tj = 25 °C
Fig 6. Drain-source on-state resistance as a function
of drain current; typical values
12
ID
(A)
003aab065
3
a
03al52
8
2
4
1
Tj = 150 °C
25 °C
0
0
1
2
3
4
5
VGS (V)
Tj = 25 °C and 150 °C; VDS > ID × RDSon
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0
-60
0
60
120
180
Tj (°C)
a = -R----D---RS---o-D--n--S(--2o--5-n--°--C----)
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
PML260SN_2
Product data sheet
Rev. 02 — 29 May 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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