SAF-XC835MT-2FGI 查看數據表（PDF） - Infineon Technologies

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SAF-XC835MT-2FGI

8-Bit Single-Chip Microcontroller

Infineon Technologies 

XC835/836

Electrical Parameters

Table 8

Input/Output Characteristics (Operating Conditions apply) (cont’d)

Parameter

Symbol

Limit Values Unit Test Conditions

Min. Max.

Input low voltage on VILP SR –

port pins

0.3 × V

VDDP

CMOS Mode

(5 & 3.3 V)

Input high voltage on VIHP SR 0.7 × –

port pins

VDDP

V CMOS Mode

(5 V & 3.3 V)

Input Hysteresis1) HYS CC 0.08 × –

V CMOS Mode (5 V)

VDDP

0.03 × –

V CMOS Mode (3.3 V)

VDDP

0.01 × –

V CMOS Mode (2.5 V)

VDDP

Pull-up current

IPUP SR –

-20

µA VIH,min (5 V)

-150 –

µA VIL,max (5 V)

–

-5

µA VIH,min (3.3 V)

-100 –

µA VIL,max (3.3 V)

Pull-down current

IPDP SR –

20

µA VIL,max (5 V)

150 –

µA VIH,min (5 V)

–

5

µA VIL,max (3.3 V)

100 –

µA VIH,min (3.3 V)

Input leakage current IOZP CC -1

1

on port pins2)

(all except P1)

µA 0 < VIN < VDDP,

TA ≤ 125 °C

Input leakage current IOZP1 CC -3

on P1[3:0]2)

Input leakage current IOZP2 CC -2

on P1[5:4]2)

Overcurrent

threshold per pin for

P1[3:0]3)

|IOCP1| SR 60

Overload current on IOVP SR -5

any pin

Absolute sum of

overload currents

Σ|IOV| SR –

3

µA 0 < VIN < VDDP,

TA ≤ 125 °C

2

µA 0 < VIN < VDDP,

TA ≤ 125 °C

115 mA VDDP = 5 V

5

mA 4)

25

mA 4)

Data Sheet

26

V1.2, 2011-03

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