T14L2M16A 查看數據表（PDF） - Taiwan Memory Technology
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T14L2M16A Datasheet PDF : 12 Pages
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tm TE
CH
Preliminary T14L2M16A
ABSOLUTE MAXIMUM RATINGS*
PARAMETER
Voltage on Any Pin Relative to VSS
Power Dissipation
Storage Temperature
Temperature Under Bias
SYM
VR
PD
TSTG
IBIAS
MIN.
-0.5
-
-55
0
MAX.
+4.6 V
1.0
+150
+70
UNIT
V
W
°C
°C
*Note: Stresses greater than those listed above Absolute Maximum Ratings may cause permanent damage to
the device. This is a stress rating only and function operation of the device at these or any other
conditions outside those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
TRUTH TABLE
CE OE WE LB UB I/O 1~8 I/O 9~16
MODE
H X* X* X* X* High-Z
High-Z
Deselected
L X* X* H H
High-Z
High-Z
Output Disabled
L H H L X* High-Z
High-Z
Output Disabled
L H H X* L
High-Z
High-Z
Output Disabled
L L H L H Data Out
High-Z
Lower Byte Read
L LHHL
High-Z
Data Out
Upper Byte Read
L L H L L Data Out Data Out
Word Read
L X* L L H
Data In
High-Z
Lower Byte Write
L X* L H L
High-Z
Data In
Upper Byte Write
L X* L L L
Data In
Data In
Word Write
*Note: X = Don’t Care (Must be low or high state), L = Low, H = High
Power
Standby
Active
Active
Active
Active
Active
Active
Active
Active
Active
TM Technology Inc. reserves the right
P. 3
to change products or specifications without notice.
Publication Date: AUG. 2002
Revision:0.A
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