T14L2M16A 查看數據表（PDF） - Taiwan Memory Technology
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T14L2M16A Datasheet PDF : 12 Pages
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tm TE
CH
Preliminary T14L2M16A
AC CHARACTERISTICS(Vcc=3.0 to 3.6V, VSS = 0V, Ta = 0 ~ +70 °C )
(1) READ CYCLE
PARAMETER
SYM.
-8
Min Max
Read Cycle Time
tRC
8
-
Address Access Time
tAA
-
8
Chip Enable Access Time
tACE
-
8
Output Enable Access Time
tOE
-3
Output Hold from Address Change tOH 3 -
Chip Enable to Output in Low-Z
tLZ
3-
Chip Disable to Output in High-Z
tHZ
-3
Output Enable to Output in Low-Z tOLZ 0 -
Output Disable to Output in High-Z tOHZ - 3
LB , UB Access Time
tBA
-3
LB , UB Enable to Output in Low-Z tBLZ 0 -
LB , UB Disable to Output in High-Z tBHZ - 3
-10
Min Max
10 -
- 10
- 10
-4
3-
3-
-4
0-
-4
-4
0-
-4
-12
Min Max
12 -
- 12
- 12
-5
3-
3-
-5
0-
-5
-5
0-
-5
-15
UNIT
Min Max
15 - ns
- 15 ns
- 15 ns
- 6 ns
3 - ns
3 - ns
- 6 ns
0 - ns
- 6 ns
- 6 ns
0 - ns
- 6 ns
(2)WRITE CYCLE
PARAMETER
Write Cycle Time
Chip Enable to Write End
Address Valid to Write End
Address Setup Time
Write Pulse Width
Write Recovery Time
Data Valid to Write End
Data Hold Time
Write Enable to Output in High-Z
Output Active from Write End
SYM.
-8
Min Max
tWC
8
-
tCW
7
-
tAW
7
-
tAS
0
-
tWP
6
-
tWR
0
-
tDW
4
-
tDH
0
-
tWHZ -
3
tOW
0
-
-10
Min Max
10 -
8-
8-
0-
7-
0-
5-
0-
-4
0-
-12
Min Max
12 -
8-
8-
0-
8-
0-
6-
0-
-5
0-
-15
UNIT
Min Max
15 - ns
10 - ns
10 - ns
0 - ns
10 - ns
0 - ns
7 - ns
0 - ns
- 6 ns
0 - ns
TM Technology Inc. reserves the right
P. 6
to change products or specifications without notice.
Publication Date: AUG. 2002
Revision:0.A
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