T14L2M16A 查看數據表（PDF） - Taiwan Memory Technology

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T14L2M16A

128K X 16 HIGH SPEED CMOS STATIC RAM

Taiwan Memory Technology 

tm TE

CH

Preliminary T14L2M16A

RECOMMENDED OPERATING CONDITIONS

- (Ta = 0 ~ +70 °C )

PARAMETER

Supply Voltage

Input Voltage

SYM

Vcc

VSS

VIH

VIL

MIN

3.0

0.0

2.0

-0.2

TYP

3.3

0.0

-

-

MAX

3.6

0.0

Vcc+0.3

0.8

UNIT

V

V

V

V

OPERATING CHARACTERISTICS

- (Vcc = 3.0 to 3.6V, VSS = 0V, Ta = 0 ~ +70 °C )

PARAMETER SYM. TEST CONDITIONS

Input Leakage

Current

ILI

Vcc = Max,

VIN = VSS to Vcc

Output Leakage

Current

Operating Power

Supply Current

Standby Power

Supply Current

(TTL Level)

Standby Power

Supply Current

(CMOS Level)

CE= VIH or OE = VIH

ILO or WE = VIL

VIO = VSS to Vcc

Vcc = Max,

CE = VIL ,

ICC VIN = VIH or VIL,

IOUT=0mA,

f=max

CE =VIH ,

ISB other input= VIL or VIH

CE ≥ Vcc-0.2V or

ISB1 VIN ≤ 0.2V or

VIN ≥ Vcc-0.2V

Output Low Voltage VOL IOL = 8.0mA

Output High Voltage VOH IOH = -4.0 mA

-8

-10

-12

-15 UNIT

Min Max Min Max Min Max Min Max

- 1 - 1 - 1 - 1 uA

- 1 - 1 - 1 - 1 uA

- 60 - 55 - 50 - 45 mA

- 15 - 15 - 15 - 15 mA

- 300 - 300 - 300 - 300 uA

- 0.4 - 0.4 - 0.4 - 0.4 V

2.4 - 2.4 - 2.4 - 2.4 - V

TM Technology Inc. reserves the right

P. 4

to change products or specifications without notice.

Publication Date: AUG. 2002

Revision:0.A

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