PHD16N03T 查看數據表（PDF） - Philips Electronics
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PHD16N03T Datasheet PDF : 12 Pages
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Philips Semiconductors
PHD16N03T
TrenchMOS™ standard level FET
120
Pder
(%)
80
03aa16
120
Ider
(%)
80
03aa24
40
40
0
0
50
100
150
200
Tmb (°C)
Pder
=
-------P----t--o---t-------
P
×
100%
t o t ( 25 °C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
102
ID
Limit RDSon = VDS / ID
(A)
0
0
50
100
150
200
Tmb (°C)
Ider
=
--------I--D---------
I
×
100%
D ( 25 °C )
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
03an46
tp = 10 µ s
10
100 µ s
DC
1 ms
10 ms
1
1
10
102
VDS (V)
Tmb = 25 °C; IDM is single pulse; VGS = 10 V.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 11672
Product data
Rev. 01 — 18 August 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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