PHD16N03T 查看數據表（PDF） - Philips Electronics
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PHD16N03T Datasheet PDF : 12 Pages
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Philips Semiconductors
PHD16N03T
TrenchMOS™ standard level FET
20
ID Tj = 25 °C
(A)
15
10
10 V
03an47
8V
7V
6V
20
ID VDS > ID x RDSon
(A)
15
10
03an49
5
5V
VGS = 4.5 V
0
0
0.5
1
1.5
2
VDS (V)
5
175 °C
Tj = 25 °C
0
0
2
4
6
8
10
VGS (V)
Tj = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Tj = 25 °C and 175 °C; VDS > ID x RDSon
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
03an48
150
2
Tj = 25 °C
RDSon
VGS = 7 V 7.5 V
a
(mΩ)
8V
1.5
100
9V
10 V
1
50
0.5
03aa27
0
0
5
10
15
20
ID (A)
Tj = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
0
-60
0
60
120
180
Tj (°C)
a = --------R---D----S---o---n-------
R D S o n ( 25 °C )
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 11672
Product data
Rev. 01 — 18 August 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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