PHD16N03T 查看數據表（PDF） - Philips Electronics

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PHD16N03T

TrenchMOS™ standard level FET

Philips Electronics 

Philips Semiconductors

PHD16N03T

TrenchMOS™ standard level FET

4. Thermal characteristics

Table 3: Thermal characteristics

Symbol Parameter

Conditions

Rth(j-mb)

Rth(j-a)

thermal resistance from junction to mounting base Figure 4

thermal resistance from junction to ambient

SOT428 minimum footprint;

vertical in still air;

mounted on a PCB

SOT404 minimum footprint;

vertical in still air;

mounted on a PCB

4.1 Transient thermal impedance

Min Typ Max Unit

-

-

4.6 K/W

-

75 -

K/W

-

50 -

K/W

03an45

10

Zth(j-mb)

(K/W)

δ = 0.5

1 0.2

0.1

0.05

0.02

10-1

10-5

single pulse

10-4

10-3

P

δ=

tp

T

10-2

tp

T

tp (s)

t

10-1

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.

9397 750 11672

Product data

Rev. 01 — 18 August 2003

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

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