PHD16N03T 查看數據表（PDF） - Philips Electronics
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PHD16N03T Datasheet PDF : 12 Pages
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Philips Semiconductors
PHD16N03T
TrenchMOS™ standard level FET
20
IS VGS = 0 V
(A)
15
03an50
10
5
175 °C
Tj = 25 °C
10
VGS
(V)
8
ID = 15 A
Tj = 25 °C
VDD = 15 V
6
4
2
03an52
0
0
0.5
1 VSD (V) 1.5
0
0
2
4 QG (nC) 6
Tj = 25 °C and 175 °C; VGS = 0 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
ID = 15 A; VDD = 15 V
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
9397 750 11672
Product data
Rev. 01 — 18 August 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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