T35L6464A 查看數據表（PDF） - Taiwan Memory Technology

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T35L6464A

SYNCHRONOUS BURST SRAM 64K x 64 SRAM

Taiwan Memory Technology 

tm TE

CH

ABSOLUTE MAXIMUM RATINGS*

Voltage on Vcc Supply Relative to Vss..

………... -0.5V to +4.6V

I/O Supply Voltage VccQ .........……..-0.5V to Vcc

VIN (inputs)............................ -0.5V to Vcc +0.5V

Storage Temperature (plastic)...... -55°C to +150°C

Junction Temperature ...........…................ +150°C

Power Dissipation .........................................1.6W

Short Circuit Output Current...................... 100mA

T35L6464A

*Stresses greater than those listed under "Absolute

Maximum Ratings" may cause permanent damage

to the device. This is a stress rating only and

functional operation of the device at these or any

other conditions above those indicated in the

operational sections of this specification is not

implied. Exposure to absolute maximum rating

conditions for extended periods may affect

reliability.

DC ELECTRICAL CHARACTERISTICS AND RECOMMENDED

OPERATING CONDITIONS

(0°C ≤ TA ≤ 70°C; Vcc = + 3.3V +10%/-5%; unless otherwise noted)

DESCRIPTION

CONDITIONS SYM. MIN MAX UNITS

Input High (Logic) voltage

VIH 2 VccQ + 0.3

V

Input Low (Logic) voltage

VIL -0.3

0.8

V

Input Leakage Current

0V ≤ VIN ≤ VCC

ILI

-2

2

µA

Output Leakage Current Output(s) disabled, 0V ILO -2

2

µA

≤ VOUT≤ VCC

Output High Voltage

IOH = -4.0 mA

VOH 2.4

V

Output Low Voltage

IOL = 8.0 mA

VOL

0.4

V

Supply Voltage

Vcc 3.1

3.6

V

N O TES

1, 2

1, 2

14

1,11

1,11

1

Taiwan Memory Technology, Inc. reserves the right P. 7

to change products or specifications without notice.

Publication Date: AUG. 1998

Revision: E

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