16N50C3(2003) 查看數據表（PDF） - Infineon Technologies

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16N50C3
(Rev.:2003)

Cool MOS™ Power Transistor

Infineon Technologies 

Final data

SPW16N50C3

Maximum Ratings

Parameter

Drain Source voltage slope

VDS = 400 V, ID = 16 A, Tj = 125 °C

Symbol

dv/dt

Value

50

Unit

V/ns

Thermal Characteristics

Parameter

Thermal resistance, junction - case

Thermal resistance, junction - ambient, leaded

Soldering temperature,

1.6 mm (0.063 in.) from case for 10s

Symbol

RthJC

RthJA

Tsold

Values

Unit

min. typ. max.

-

- 0.78 K/W

-

-

62

-

- 260 °C

Electrical Characteristics, at Tj=25°C unless otherwise specified

Parameter

Symbol Conditions

Values

Unit

min. typ. max.

Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 500

-

Drain-Source avalanche

V(BR)DS VGS=0V, ID=16A

- 600

breakdown voltage

-V

-

Gate threshold voltage

VGS(th) ID=675µΑ, VGS=VDS 2.1

3

3.9

Zero gate voltage drain current IDSS

VDS=500V, VGS=0V,

µA

Tj=25°C,

-

0.1

1

Tj=150°C

-

- 100

Gate-source leakage current

IGSS

Drain-source on-state resistance RDS(on)

VGS=20V, VDS=0V

VGS=10V, ID=10A,

Tj=25°C

Tj=150°C

-

- 100 nA

Ω

- 0.25 0.28

- 0.68 -

Gate input resistance

RG

f=1MHz, open Drain

-

1.5

-

Page 2

2003-06-30

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